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| savantic semiconductor product specification silicon npn power transistors 2SD1444 2SD1444a description with to-220fa package low collector saturation voltage high speed switching high collector current complement to type 2sb953/953a applications power amplifiers low voltage switching pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SD1444 40 v cbo collector- base voltage 2SD1444a open emitter 50 v 2SD1444 20 v ceo collector- emitter voltage 2SD1444a open base 40 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 7 a i cm collector current-peak 12 a t c =25 30 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1444 2SD1444a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD1444 20 v (br)ceo collector-emitter breakdown voltage 2SD1444a i c =10ma , i b =0 40 v v cesat collector-emitter saturation voltage i c =5a; i b =0.16a 0.6 v v besat base-emitter saturation voltage i c =5a; i b =0.16a 1.5 v 2SD1444 v cb =40v; i e =0 i cbo collector cut-off current 2SD1444a v cb =50v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =0.1a ; v ce =2v 45 h fe-2 dc current gain i c =2a ; v ce =2v 60 260 f t transition frequency i c =0.5a ; v ce =10v 150 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 110 pf switching times t on turn-on time 0.3 s t stg storage time 0.3 s t f fall time i c =2a; i b1 =-i b2 =66ma 0.1 s h fe-2 classifications r q p 60-120 90-180 130-260 savantic semiconductor product specification 3 silicon npn power transistors 2SD1444 2SD1444a package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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